Achieving low VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack

Veloso, AnabelaAnabelaVelosoYu, HongYuHongYuYuLauwers, AnneAnneLauwersChang, Shou-ZenShou-ZenChangAdelmann, ChristophChristophAdelmannOnsia, BartBartOnsiaDemand, MarcMarcDemandBrus, StephanStephanBrusVrancken, ChristaChristaVranckenSinganamalla, RaghunathRaghunathSinganamallaLehnen, PeerPeerLehnenKittl, JorgeJorgeKittlKauerauf, ThomasThomasKaueraufVos, RitaRitaVosO'Sullivan, BarryBarryO'SullivanVan Elshocht, SvenSvenVan ElshochtMitsuhashi, RiichirouRiichirouMitsuhashiWhittemore, G.G.WhittemoreYin, K.M.K.M.YinNiwa, MasaakiMasaakiNiwaHoffmann, ThomasThomasHoffmannAbsil, PhilippePhilippeAbsilJurczak, GosiaGosiaJurczakBiesemans, SergeSergeBiesemans2021-10-162021-10-162007-09https://imec-publications.be/handle/20.500.12860/13157Achieving low VT Ni-FUSI CMOS via lanthanide incorporation in the gate stackProceedings paper