650 V dispersion-free enhancement-mode GaN-on-Si HEMTs processed in a 200 mm CMOS fab

Kim, J.-Y.J.-Y.KimLee, D.D.LeeKim, Y.S.Y.S.KimSon, J.J.SonLuo, W.W.LuoDecoutere, StefaanStefaanDecoutere2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/28682650 V dispersion-free enhancement-mode GaN-on-Si HEMTs processed in a 200 mm CMOS fabProceedings paperhttps://ieeexplore.ieee.org/document/8246002/