Impact of the Oxide Aperture Width on the Degradation of 845 Nm VCSELs for Silicon Photonics

Zenari, MicheleMicheleZenariBuffolo, MatteoMatteoBuffoloRampazzo, FabianaFabianaRampazzoDe Santi, CarloCarloDe SantiRossi, FrancescaFrancescaRossiLazzarini, LauraLauraLazzariniGoyvaerts, JeroenJeroenGoyvaertsGrabowski, AlexanderAlexanderGrabowskiGustavsson, Johan S.Johan S.GustavssonBaets, RoelRoelBaetsLarsson, AndersAndersLarssonRoelkens, GuntherGuntherRoelkensMeneghesso, GaudenzioGaudenzioMeneghessoZanoni, EnricoEnricoZanoniMeneghini, MatteoMatteoMeneghini2024-09-182024-09-182025-MAR-A1077-260XWOS:001309252000001https://imec-publications.be/handle/20.500.12860/44519Impact of the Oxide Aperture Width on the Degradation of 845 Nm VCSELs for Silicon PhotonicsJournal article10.1109/JSTQE.2024.3415674WOS:001309252000001