Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

Mukherjee, KalparupaKalparupaMukherjeeDe Santi, CarloCarloDe SantiBorga, MatteoMatteoBorgaGeens, KarenKarenGeensYou, ShuzhenShuzhenYouBakeroot, BenoitBenoitBakerootDecoutere, StefaanStefaanDecoutereDiehle, PatrickPatrickDiehleHuebner, SusanneSusanneHuebnerAltmann, FrankFrankAltmannBuffolo, MatteoMatteoBuffoloMeneghesso, GaudenzioGaudenzioMeneghessoZanoni, EnricoEnricoZanoniMeneghini, MatteoMatteoMeneghini2022-03-042022-03-0420211996-1944WOS:000650600900001https://imec-publications.be/handle/20.500.12860/39306Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack OptimizationJournal article review10.3390/ma14092316WOS:000650600900001DYNAMIC-R-ONTHRESHOLD VOLTAGEN-DIODESHOPPING CONDUCTIONMOSFETSMECHANISMSSCHOTTKYBEHAVIORORIGINHEMTSMEDLINE:33946943