Stress analysis with convergent beam electron diffraction around NMOS transistors

Stuer, CindyCindyStuerBender, HugoHugoBenderVan Landuyt, J.J.Van LanduytEyben, PierrePierreEyben2021-10-142021-10-142001https://imec-publications.be/handle/20.500.12860/5686Stress analysis with convergent beam electron diffraction around NMOS transistorsProceedings paper