Compact thermally stable high voltage FinFET with 40 nm tox and lateral break-down >35 V for 3D NAND flash periphery application

Spessot, AlessioAlessioSpessotMatagne, PhilippePhilippeMatagneArimura, HiroakiHiroakiArimuraGanguly, JishnuJishnuGangulyRitzenthaler, RomainRomainRitzenthalerBastos, JoaoJoaoBastosSarkar, RitamRitamSarkarCapogreco, ElenaElenaCapogrecoChen, Y.Y.ChenHoriguchi, NaotoNaotoHoriguchi2025-07-242024-02-202025-07-2420240021-4922WOS:001159914900001https://imec-publications.be/handle/20.500.12860/43568Compact thermally stable high voltage FinFET with 40 nm tox and lateral break-down >35 V for 3D NAND flash periphery applicationJournal article10.35848/1347-4065/ad2138WOS:001159914900001