Impact of PDA temperature on electron trap energy and spatial distributions in SiO2/Al2O3 stack as the IPD in Flash memory cells

Zheng, X.F.X.F.ZhengZhang, W.D.W.D.ZhangGovoreanu, BogdanBogdanGovoreanuZhang, J.F.J.F.ZhangVan Houdt, JanJanVan Houdt2021-10-182021-10-1820090167-9317https://imec-publications.be/handle/20.500.12860/16612Impact of PDA temperature on electron trap energy and spatial distributions in SiO2/Al2O3 stack as the IPD in Flash memory cellsJournal article