Vertical nanowire TFET diameter influence on intrinsic voltage gain for different inversion conditions

Sivieri, V.B.V.B.SivieriBordallo, CaioCaioBordalloAgopian, Paula G.D.Paula G.D.AgopianMartino, Joao AntonioJoao AntonioMartinoRooyackers, RitaRitaRooyackersVandooren, AnneAnneVandoorenSimoen, EddyEddySimoenThean, AaronAaronTheanClaeys, CorCorClaeys2021-10-222021-10-222015https://imec-publications.be/handle/20.500.12860/25922Vertical nanowire TFET diameter influence on intrinsic voltage gain for different inversion conditionsProceedings paperhttp://ecst.ecsdl.org/content/66/5/187.abstract