Scalability comparison between raised- and embedded-SiGe source/drain structures for Si0.55Ge0.45 implant free quantum well pFET

Yamaguchi, ShimpeiShimpeiYamaguchiWitters, LiesbethLiesbethWittersMitard, JeromeJeromeMitardEneman, GeertGeertEnemanHellings, GeertGeertHellingsHikavyy, AndriyAndriyHikavyyLoo, RogerRogerLooHoriguchi, NaotoNaotoHoriguchi2021-10-262021-10-262018-040026-2714https://imec-publications.be/handle/20.500.12860/32318Scalability comparison between raised- and embedded-SiGe source/drain structures for Si0.55Ge0.45 implant free quantum well pFETJournal articlehttps://www.sciencedirect.com/science/article/pii/S0026271418301112