Selective wet removal of Hf-based layers and post-dry etch residues in high-k and metal gate stacks

Claes, MartineMartineClaesParaschiv, VasileVasileParaschivBeckx, StephanStephanBeckxDemand, MarcMarcDemandDeweerd, WimWimDeweerdGaraud, SylvainSylvainGaraudKraus, HaraldHaraldKrausVos, RitaRitaVosSnow, JimJimSnowBoullart, WernerWernerBoullartDe Gendt, StefanStefanDe Gendt2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10231Selective wet removal of Hf-based layers and post-dry etch residues in high-k and metal gate stacksProceedings paper