On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs

Simoen, EddyEddySimoenAoulaiche, MarcMarcAoulaicheVeloso, AnabelaAnabelaVelosoJurczak, GosiaGosiaJurczakClaeys, CorCorClaeysMendes Almeida, LucianoLucianoMendes AlmeidaAndrada, GloriaGloriaAndradaLuque Rodrigues, AbrahamAbrahamLuque RodriguesJimenez Tejada, Juan AntonioJuan AntonioJimenez TejadaCaillat, ChristianChristianCaillatFazan, PierrePierreFazan2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/21511On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETsProceedings paper