Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs

Buhler, RudolfRudolfBuhlerAgopian, Paula GDPaula GDAgopianCollaert, NadineNadineCollaertSimoen, EddyEddySimoenClaeys, CorCorClaeysMartino, JoaoJoaoMartino2021-10-222021-10-2220150038-1101https://imec-publications.be/handle/20.500.12860/25028Different stress techniques and their efficiency on triple-gate SOI n-MOSFETsJournal articlehttp://www.sciencedirect.com/science/article/pii/S0038110114001956