Hot-carrier analysis on nMOS Si finFETs with solid source doped junctions

Vaisman Chasin, AdrianAdrianVaisman ChasinFranco, JacopoJacopoFrancoRitzenthaler, RomainRomainRitzenthalerHellings, GeertGeertHellingsCho, Moon JuMoon JuChoSasaki, YuichiroYuichiroSasakiSubirats, AlexandreAlexandreSubiratsRoussel, PhilippePhilippeRousselKaczer, BenBenKaczerLinten, DimitriDimitriLintenHoriguchi, NaotoNaotoHoriguchiGroeseneken, GuidoGuidoGroesenekenThean, AaronAaronThean2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/27426Hot-carrier analysis on nMOS Si finFETs with solid source doped junctionsProceedings paperhttp://ieeexplore.ieee.org/document/7574535/?tp=&arnumber=7574535