Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures

Vandamme, EwoutEwoutVandammeSchreurs, DominiqueDominiqueSchreursVan Dinther, G.G.Van Dinther2021-10-142021-10-142001https://imec-publications.be/handle/20.500.12860/5761Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structuresJournal article