a-Si:H Layer Enabling a sub-1.2 dB Loss SiN-III/V-SiN Transition for Evanescently Coupled Lasers at 920 nm

Akritidis, KonstantinosKonstantinosAkritidisBillet, MaximilienMaximilienBilletSeema Saseendran, SandeepSandeepSeema SaseendranPoelman, StijnStijnPoelmanRoelkens, GuntherGuntherRoelkensNeutens, PieterPieterNeutensBrouckaert, JoostJoostBrouckaertVan Dorpe, PolPolVan DorpeKuyken, BartBartKuyken2024-03-282024-03-072024-03-2820232374-0140WOS:001156890300081https://imec-publications.be/handle/20.500.12860/43634a-Si:H Layer Enabling a sub-1.2 dB Loss SiN-III/V-SiN Transition for Evanescently Coupled Lasers at 920 nmProceedings paper10.1109/IPC57732.2023.10360576979-8-3503-4722-7WOS:001156890300081