Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking

Franco, JacopoJacopoFrancode Marneffe, Jean-FrancoisJean-Francoisde MarneffeVandooren, AnneAnneVandoorenKimura, YosukeYosukeKimuraNyns, LauraLauraNynsWu, ZhichengZhichengWuEl-Sayed, A-MA-MEl-SayedJech, M.M.JechWaldhoer, D.D.WaldhoerClaes, DieterDieterClaesArimura, HiroakiHiroakiArimuraRagnarsson, Lars-AkeLars-AkeRagnarssonAfanas'ev, V.V.Afanas'evStesmans, A.A.StesmansHoriguchi, NaotoNaotoHoriguchiLinten, DimitriDimitriLintenGrasser, T.T.GrasserKaczer, BenBenKaczer2021-12-162021-12-062021-12-1620202380-9248WOS:000717011600163https://imec-publications.be/handle/20.500.12860/38549Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier StackingProceedings paper10.1109/IEDM13553.2020.9372054978-1-7281-8888-1WOS:000717011600163