Quantum simulations of electrostatics in Si cylindrical nanowire pinch-off nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations

Pham, AntonAntonPhamSoree, BartBartSoreeMagnus, WimWimMagnusJungemann, ChristophChristophJungemannMeinerzhagen, BerndBerndMeinerzhagenPourtois, GeoffreyGeoffreyPourtois2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/19571Quantum simulations of electrostatics in Si cylindrical nanowire pinch-off nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientationsProceedings paper