Contact resistivity and Fermi-level pinning in n-type Ge contacts with epitaxial Si-passivation

Martens, KoenKoenMartensRooyackers, RitaRitaRooyackersFirrincieli, AndreaAndreaFirrincieliVincent, BenjaminBenjaminVincentLoo, RogerRogerLooDe Jaeger, BriceBriceDe JaegerMeuris, MarcMarcMeurisFavia, PaolaPaolaFaviaBender, HugoHugoBenderDouhard, BastienBastienDouhardVandervorst, WilfriedWilfriedVandervorstSimoen, EddyEddySimoenJurczak, GosiaGosiaJurczakWouters, DirkDirkWoutersKittl, JorgeJorgeKittl2021-10-192021-10-1920110003-6951https://imec-publications.be/handle/20.500.12860/19396Contact resistivity and Fermi-level pinning in n-type Ge contacts with epitaxial Si-passivationJournal article