O'Sullivan, BarryBarryO'SullivanMitsuhashi, RiichirouRiichirouMitsuhashiOkawa, HiroshiHiroshiOkawaSengoku, NaohisaNaohisaSengokuSchram, TomTomSchramGroeseneken, GuidoGuidoGroesenekenBiesemans, SergeSergeBiesemansNakabayashi, TakashiTakashiNakabayashiIkeda, AtsushiAtsushiIkedaNiwa, MasaakiMasaakiNiwa2021-10-172021-10-172008-09https://imec-publications.be/handle/20.500.12860/14261Defect profiling and the role of nitrogen in lanthanum oxide-capped high-k dielectrics for nMOS applicationsProceedings paper