Comparison of DC/AC Hot Carrier Degradation between Short Channel Si Bulk and SiGe SOI p-FinFETs

Chang, HaoHaoChangZhang, YongkuiYongkuiZhangZhou, LongdaLongdaZhouJi, ZhigangZhigangJiYang, HongHongYangLiu, QianqianQianqianLiuLi, YongliangYongliangLiLiang, RenrongRenrongLiangSimoen, EddyEddySimoenZhu, HuilongHuilongZhuLuo, JunJunLuoWang, WenwuWenwuWang2022-05-032022-04-282022-05-0320211946-1550WOS:000782378200088https://imec-publications.be/handle/20.500.12860/39699Comparison of DC/AC Hot Carrier Degradation between Short Channel Si Bulk and SiGe SOI p-FinFETsProceedings paper10.1109/IPFA53173.2021.9617433978-1-6654-3988-6WOS:000782378200088TRAP GENERATIONVARIABILITYPERFORMANCERELIABILITYSTRESS