TSUPREM4 based modeling of boron and carbon diffusion in SiGeC base layers under rapid thermal annealing conditions

Sibaja-Hernandez, ArturoArturoSibaja-HernandezXu, MingweiMingweiXuDecoutere, StefaanStefaanDecoutereMaes, HermanHermanMaes2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9597TSUPREM4 based modeling of boron and carbon diffusion in SiGeC base layers under rapid thermal annealing conditionsJournal article