Temperature dependence of the leakage current of advanced p-n junction diodes fabricated on different silicon substrates

Poyai, AmpornAmpornPoyaiSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-142021-10-142001https://imec-publications.be/handle/20.500.12860/5587Temperature dependence of the leakage current of advanced p-n junction diodes fabricated on different silicon substratesProceedings paper