Enhanced Ge photoluminescence by increasing the active P doping using high order Ge precursors at lower growth temperatures

Shimura, YosukeYosukeShimuraSrinivasan, AshwynAshwynSrinivasanVan Thourhout, DriesDriesVan ThourhoutVan Deun, RikRikVan DeunPantouvaki, MariannaMariannaPantouvakiVan Campenhout, JorisJorisVan CampenhoutLoo, RogerRogerLoo2021-10-222021-10-222015https://imec-publications.be/handle/20.500.12860/25903Enhanced Ge photoluminescence by increasing the active P doping using high order Ge precursors at lower growth temperaturesMeeting abstract