The behaviour of oxygen in oxygenated n-type high-resistivity float-zone silicon

Simoen, EddyEddySimoenClaeys, CorCorClaeysJob, R.R.JobUlyashin, A. G.A. G.UlyashinFahrner, W. R.W. R.FahrnerTonelli, G.G.TonelliDegryse, O.O.DegryseClauws, P.P.Clauws2021-10-142021-10-142002https://imec-publications.be/handle/20.500.12860/6829The behaviour of oxygen in oxygenated n-type high-resistivity float-zone siliconProceedings paper