Substrate induced composition change during Ge2/Sb2/Te5 atomic layer deposition and study of initial reactions on SiO2 surface

Sinha, JyotiJyotiSinhaNyns, LauraLauraNynsDelabie, AnneliesAnneliesDelabie2025-03-202024-11-242025-03-2020240734-2101WOS:001355890200001https://imec-publications.be/handle/20.500.12860/44835Substrate induced composition change during Ge2/Sb2/Te5 atomic layer deposition and study of initial reactions on SiO2 surfaceJournal article10.1116/6.0003890WOS:001355890200001PHASE-CHANGE MEMORYOXIDEGROWTHFILMSGETE