Demonstration of a Free-layer Developed With Atomistic Simulations Enabling BEOL Compatible VCMA-MRAM with a Coefficient >= 100fJ/Vm

Carpenter, RobertRobertCarpenterKim, WoojinWoojinKimSankaran, KiroubanandKiroubanandSankaranAo, NanNanAoBen Chroud, MohamedMohamedBen ChroudKumar, A.A.KumarTrovato, AnnaAnnaTrovatoPourtois, GeoffreyGeoffreyPourtoisCouet, SebastienSebastienCouetKar, Gouri SankarGouri SankarKar2022-08-252022-07-092022-08-2520212380-9248WOS:000812325400082https://imec-publications.be/handle/20.500.12860/40083Demonstration of a Free-layer Developed With Atomistic Simulations Enabling BEOL Compatible VCMA-MRAM with a Coefficient >= 100fJ/VmProceedings paper10.1109/IEDM19574.2021.9720579978-1-6654-2572-8WOS:000812325400082