Technology assessment for the implementation of magnetoresistive elements with semiconductor components in magnetic random access memory (MRAM) architectures

Boeve, HansHansBoeveBruynseraede, ChristopheChristopheBruynseraedeDas, J.J.DasDessein, KristofKristofDesseinBorghs, GustaafGustaafBorghsDe Boeck, JoJoDe BoeckSousa, R. C.R. C.SousaMelo, LuisLuisMeloFreitas, P. P.P. P.Freitas2021-10-062021-10-061999https://imec-publications.be/handle/20.500.12860/3248Technology assessment for the implementation of magnetoresistive elements with semiconductor components in magnetic random access memory (MRAM) architecturesJournal article