Optimizing the read-out bias for the capacitorless 1T bulk FinFET RAM cell

Collaert, NadineNadineCollaertAoulaiche, MarcMarcAoulaicheRakowski, MichalMichalRakowskiRedolfi, AugustoAugustoRedolfiDe Wachter, BartBartDe WachterVan Houdt, JanJanVan HoudtJurczak, GosiaGosiaJurczak2021-10-172021-10-1720090741-3106https://imec-publications.be/handle/20.500.12860/15124Optimizing the read-out bias for the capacitorless 1T bulk FinFET RAM cellJournal article