A new technique to extract the oxide charge density at front and back interfaces of SOI NMOSFETs devices

Nicolett, A. S.A. S.NicolettMartino, Joao AntonioJoao AntonioMartinoSimoen, EddyEddySimoenClaeys, C.C.Claeys2021-10-142021-10-142001https://imec-publications.be/handle/20.500.12860/5515A new technique to extract the oxide charge density at front and back interfaces of SOI NMOSFETs devicesProceedings paper