Validation of retention modeling as a trap-profiling technique for SiN-based charge-trapping memories

Suhane, AmitAmitSuhaneArreghini, AntonioAntonioArreghiniDegraeve, RobinRobinDegraeveVan den Bosch, GeertGeertVan den BoschBreuil, LaurentLaurentBreuilZahid, MohammedMohammedZahidJurczak, GosiaGosiaJurczakDe Meyer, KristinKristinDe MeyerVan Houdt, JanJanVan Houdt2021-10-182021-10-1820100741-3106https://imec-publications.be/handle/20.500.12860/18052Validation of retention modeling as a trap-profiling technique for SiN-based charge-trapping memoriesJournal article