Low-frequency noise behavior of SiO2-HfO2 dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness

Simoen, EddyEddySimoenMercha, AbdelkarimAbdelkarimMerchaPantisano, LuigiLuigiPantisanoClaeys, CorCorClaeysYoung, E.E.Young2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9606Low-frequency noise behavior of SiO2-HfO2 dual-layer gate dielectric nMOSFETs with different interfacial oxide thicknessJournal article