Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy

Wang, HongyueHongyueWangWang, JinyanJinyanWangHsu, BrentBrentHsuZhao, MingMingZhaoSimoen, EddyEddySimoenSibaja-Hernandez, ArturoArturoSibaja-Hernandez2022-05-022021-12-062022-03-242022-05-022021-11-220021-8979WOS:000723254200001https://imec-publications.be/handle/20.500.12860/38568Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopyJournal article10.1063/5.0066681WOS:000723254200001DEFECT STATESTRAPS