Smooth and high quality epitaxial strained Ge grown on siGe strain relaxed buffers with 70-80% Ge

Loo, RogerRogerLooSouriau, LaurentLaurentSouriauOng, PatrickPatrickOngKenis, KarineKarineKenisRip, JensJensRipPeter, StorckStorckPeterBuschhardt, ThomasThomasBuschhardtVorderwestner, MartinMartinVorderwestner2021-10-192021-10-1920110022-0248https://imec-publications.be/handle/20.500.12860/19333Smooth and high quality epitaxial strained Ge grown on siGe strain relaxed buffers with 70-80% GeJournal article