Use of bilayer gate insulator in GaN-on-Si vertical trench MOSFETs: Impact on performance and reliability

Mukherjee, KalparupaKalparupaMukherjeeDe Santi, CarloCarloDe SantiBorga, MatteoMatteoBorgaYou, ShuzhenShuzhenYouGeens, KarenKarenGeensBakeroot, BenoitBenoitBakerootDecoutere, StefaanStefaanDecoutereMeneghesso, GaudenzioGaudenzioMeneghessoZanoni, EnricoEnricoZanoniMeneghini, MatteoMatteoMeneghini2021-10-292021-10-2920201996-1944https://imec-publications.be/handle/20.500.12860/35622Use of bilayer gate insulator in GaN-on-Si vertical trench MOSFETs: Impact on performance and reliabilityJournal articlehttps://www.mdpi.com/1996-1944/13/21/4740