Electron valence-band tunnelling excess noise in twin-gate silicon-on-insulator MOSFETs

Simoen, EddyEddySimoenClaeys, CorCorClaeysLukyanchikova, N.N.LukyanchikovaGabar, N.N.GabarSmolanka, A.A.Smolanka2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/11205Electron valence-band tunnelling excess noise in twin-gate silicon-on-insulator MOSFETsProceedings paper