Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness

Poliakov, PavelPavelPoliakovBlomme, PieterPieterBlommeMiranda Corbalan, MiguelMiguelMiranda CorbalanVan Houdt, JanJanVan HoudtDehaene, WimWimDehaene2021-10-192021-10-192011-050026-2714https://imec-publications.be/handle/20.500.12860/19584Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughnessJournal article