Yang, YiYiYangYu, HaoHaoYuTsai, Meng-CheMeng-CheTsaiLin, Wei-TungWei-TungLinKuo, Ying-ChuYing-ChuKuoO'Sullivan, BarryBarryO'SullivanRathi, AartiAartiRathiGupta, AmratanshAmratanshGuptaYadav, SachinSachinYadavAlian, AliRezaAliRezaAlianPeralagu, UthayasankaranUthayasankaranPeralaguParvais, BertrandBertrandParvaisCollaert, NadineNadineCollaertWu, Tian-LiTian-LiWu2026-04-232026-04-232025979-8-3315-0478-61541-7026https://imec-publications.be/handle/20.500.12860/59181This study examines the stability of RF MIS-HEMTs under ON, SEMI-ON, and OFF-state pulses with in-situ SiN thicknesses scaled from 10nm to 1nm, compared to RF Schottky HEMTs. While stability is maintained under ON-state pulses, significant degradation is observed under SEMI-ON and OFFstate pulses, particularly in devices with a 1 nm in-situ SiN layer (M1). The high interface trap density (Nit) and inadequate passivation of the M1 sample contribute to the observed current degradation. EDX analysis suggests a rough interface in M1, likely due to non-uniform SiN growth or SiN/Al2O3 intermixing.engProceedings paper10.1109/IRPS48204.2025.10983187WOS:001546466200084