Epitaxial Ge on standard STI patterned Si wafers: high quality virtual substrates for Ge pMOS and III/V nMOS

Loo, RogerRogerLooWang, GangGangWangSouriau, LaurentLaurentSouriauLin, VicVicLinTakeuchi, ShotaroShotaroTakeuchiBrammertz, GuyGuyBrammertzCaymax, MattyMattyCaymax2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/15745Epitaxial Ge on standard STI patterned Si wafers: high quality virtual substrates for Ge pMOS and III/V nMOSProceedings paper