Favia, PaolaPaolaFaviaEneman, GeertGeertEnemanNalin Mehta, AnkitAnkitNalin MehtaMartinez Alanis, Gerardo TadeoGerardo TadeoMartinez AlanisRichard, OlivierOlivierRichardHikavyy, AndriyAndriyHikavyyPuttarame Gowda, PallaviPallaviPuttarame GowdaSeidel, FelixFelixSeidelPourtois, GeoffreyGeoffreyPourtoisDe Keersgieter, AnAnDe KeersgieterGrieten, EvaEvaGrieten2025-03-182025-03-182025-03-170167-9317https://imec-publications.be/handle/20.500.12860/45416Unveiling strain in future generation transistor technology by Bessel beam electron diffraction methodJournal articlehttps://doi.org/10.1016/j.mee.2025.112334Materials scienceTransmission electron microscopy (TEM); Strain mapping; Bessel beam electron diffraction; (BBED); Semiconductor devices; Silicon