Substrate bias dependency of sense margin and retention in bulk FinFET 1T-DRAM cells

Collaert, NadineNadineCollaertAoulaiche, MarcMarcAoulaicheDe Keersgieter, AnAnDe KeersgieterDe Wachter, BartBartDe WachterJurczak, GosiaGosiaJurczakAltimime, LaithLaithAltimime2021-10-182021-10-182010-09https://imec-publications.be/handle/20.500.12860/16898Substrate bias dependency of sense margin and retention in bulk FinFET 1T-DRAM cellsProceedings paper