The impact of dummy gate processing on Si-cap-free SiGe passivation: a physical characterization study on strained SiGe 25% and 45%

Wostyn, KurtKurtWostynRagnarsson, Lars-AkeLars-AkeRagnarssonSchram, TomTomSchramWitters, LiesbethLiesbethWittersConard, ThierryThierryConardDouhard, BastienBastienDouhardVanhaeren, DanielleDanielleVanhaerenHolsteyns, FrankFrankHolsteynsVandervorst, WilfriedWilfriedVandervorstHoriguchi, NaotoNaotoHoriguchi2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/29947The impact of dummy gate processing on Si-cap-free SiGe passivation: a physical characterization study on strained SiGe 25% and 45%Proceedings paperhttp://ecst.ecsdl.org/content/80/2/155.abstract