Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices

Jech, MarkusMarkusJechEl-Sayed, Al-MoatasemAl-MoatasemEl-SayedTyaginov, StanislavStanislavTyaginovWaldhoer, DominicDominicWaldhoerBouakline, FoudhilFoudhilBouaklineSaalfrank, PeterPeterSaalfrankJabs, DominicDominicJabsJungemann, ChristophChristophJungemannWaltl, MichaelMichaelWaltlGrasser, TiborTiborGrasser2023-08-082023-06-202023-06-222023-08-082021-012331-7019WOS:000678050500005https://imec-publications.be/handle/20.500.12860/41988Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor DevicesJournal article10.1103/PhysRevApplied.16.014026WOS:000678050500005SCANNING-TUNNELING-MICROSCOPYELECTRON-SPIN-RESONANCEHYDROGEN/DEUTERIUM DESORPTIONULTRAHIGH-VACUUMHOLE INJECTIONX-1) SURFACE