Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

Young, C.D.C.D.YoungKerber, AndreasAndreasKerberHou, T.H.T.H.HouCartier, EduardEduardCartierBrown, G.A.G.A.BrownBersuker, G.G.BersukerKim, Y.Y.KimLim, C.C.LimGutt, J.J.GuttLysaght, P.P.LysaghtBennett, J.J.BennettLee, C.H.C.H.LeeGopalan, S.S.GopalanGardner, M.M.GardnerZeitzoff, P.P.ZeitzoffGroeseneken, GuidoGuidoGroesenekenMurto, R.W.R.W.MurtoHuff, H.R.H.R.Huff2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9966Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structuresProceedings paper