Impact of dopants and silicon structure dimensions on {113}- defect formation during 2 MeV electron irradiation in an UHVEM

Vanhellemont, JanJanVanhellemontAnada, S.S.AnadaNagase, T.T.NagaseYasuda, H.H.YasudaSchulze, AndreasAndreasSchulzeBender, HugoHugoBenderRooyackers, RitaRitaRooyackersVandooren, AnneAnneVandooren2021-10-232021-10-2320151610-1634https://imec-publications.be/handle/20.500.12860/26106Impact of dopants and silicon structure dimensions on {113}- defect formation during 2 MeV electron irradiation in an UHVEMJournal articlehttp://onlinelibrary.wiley.com/doi/10.1002/pssc.201400222/abstract