Improved channel hot carrier reliability in p-FinFETs with replacement metal gate by a nitrogen post deposition anneal process

Cho, Moon JuMoon JuChoArimura, HiroakiHiroakiArimuraLee, Jae WooJae WooLeeKaczer, BenBenKaczerVeloso, AnabelaAnabelaVelosoBoccardi, GuillaumeGuillaumeBoccardiRagnarsson, Lars-AkeLars-AkeRagnarssonKauerauf, ThomasThomasKaueraufHoriguchi, NaotoNaotoHoriguchiGroeseneken, GuidoGuidoGroeseneken2021-10-222021-10-222014-031530-4388https://imec-publications.be/handle/20.500.12860/23650Improved channel hot carrier reliability in p-FinFETs with replacement metal gate by a nitrogen post deposition anneal processJournal articlehttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6626571