Investigation of low temperature epitaxial SiGe:P in view of source/drain application for 5nm technology node and below

Hikavyy, AndriyAndriyHikavyyPorret, ClémentClémentPorretVohra, AnuragAnuragVohraAyyad, MustafaMustafaAyyadDouhard, BastienBastienDouhardLoo, RogerRogerLoo2021-10-282021-10-282020-08https://imec-publications.be/handle/20.500.12860/35277Investigation of low temperature epitaxial SiGe:P in view of source/drain application for 5nm technology node and belowMeeting abstracthttps://ecs.confex.com/ecs/prime2020/meetingapp.cgi/Paper/143409