Excess Lorentzian noise in partially-depleted SOI-nMOSFETs induced by an accumulation back gate-bias

Lukyanchikova, N.N.LukyanchikovaGarbar, N.N.GarbarSmolanka, A.A.SmolankaSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9229Excess Lorentzian noise in partially-depleted SOI-nMOSFETs induced by an accumulation back gate-biasJournal article