Effect of O-2 post-deposition anneals on the properties of ultra-thin SiOx/ZrO2 gate dielectric stacks

Houssa, MichelMichelHoussaNaili, MohamedMohamedNailiZhao, ChaoChaoZhaoBender, HugoHugoBenderHeyns, MarcMarcHeynsStesmans, AndreAndreStesmans2021-10-142021-10-142001https://imec-publications.be/handle/20.500.12860/5353Effect of O-2 post-deposition anneals on the properties of ultra-thin SiOx/ZrO2 gate dielectric stacksJournal article