Low VT metal-gate/high-k nMOSFETs - PBTI dependence and VT tune-ability on La/Dy-capping layer locations and laser annealing conditions

Chang, Shou-ZenShou-ZenChangHoffmann, Thomas Y.Thomas Y.HoffmannYu, HongYuHongYuYuAoulaiche, MarcMarcAoulaicheRohr, ErikaErikaRohrAdelmann, ChristophChristophAdelmannKaczer, BenBenKaczerDelabie, AnneliesAnneliesDelabieFavia, PaolaPaolaFaviaVan Elshocht, SvenSvenVan ElshochtKubicek, StefanStefanKubicekSchram, TomTomSchramWitters, ThomasThomasWittersRagnarsson, Lars-AkeLars-AkeRagnarssonWang, Xin PengXin PengWangCho, Hag-JuHag-JuChoMueller, MarkusMarkusMuellerChiarella, ThomasThomasChiarellaAbsil, PhilippePhilippeAbsilBiesemans, SergeSergeBiesemans2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/13498Low VT metal-gate/high-k nMOSFETs - PBTI dependence and VT tune-ability on La/Dy-capping layer locations and laser annealing conditionsProceedings paper