MoS2 functionalization with a Sub-nm thin SiO2 layer for atomic layer deposition of high-k dielectrics

Zhang, HaodongHaodongZhangArutchelvan, GouthamGouthamArutchelvanMeersschaut, JohanJohanMeersschautGaur, AbhinavAbhinavGaurConard, ThierryThierryConardBender, HugoHugoBenderLin, DennisDennisLinAsselberghs, IngeIngeAsselberghsHeyns, MarcMarcHeynsRadu, IulianaIulianaRaduVandervorst, WilfriedWilfriedVandervorstDelabie, AnneliesAnneliesDelabie2021-10-242021-10-2420170897-4756https://imec-publications.be/handle/20.500.12860/30014MoS2 functionalization with a Sub-nm thin SiO2 layer for atomic layer deposition of high-k dielectricsJournal articlehttp://pubs.acs.org/doi/abs/10.1021/acs.chemmater.7b01695